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| 31-35 GHz GaAs MMIC Driver Amplifier AA035P3-00 Features s Single Bias Supply Operation (5 V) s 19 dB Typical Small Signal Gain s 17 dBm Typical P1 dB Output Power at 35 GHz s 0.25 m Ti/Pd/Au Gates s 100% On-Wafer RF and DC Testing 0.000 3.810 1.905 1.250 Chip Outline 1.554 2.471 3.386 s 100% Visual Inspection to MIL-STD-883 MT 2010 0.000 Description Alpha's three-stage reactively-matched Ka band GaAs MMIC driver amplifier has a typical P1 dB of 17 dBm with 18 dB associated gain at 35 GHz. The chip uses Alpha's proven 0.25 m MESFET technology, which is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate solder or epoxy die attach processes. The amplifier is a self-bias design requiring a single positive drain bias to one of any three bonding sites. All chips are screened for S-parameters prior to shipment for guaranteed performance. A broad range of applications exist in both the high reliability and commercial areas where high gain and power are required. Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55C to +90C -65C to +150C 7 VDC 19 dBm 175C Electrical Specifications at 25C (VDS = 5 V) Parameter Drain Current Small Signal Gain Noise Figure1 Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression Saturated Output Power Thermal Resistance2 1. Not measured on a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip. Condition F= 31-35 GHz F= 35 GHz F= 31-35 GHz F= 31-35 GHz F= 35 GHz F= 35 GHz Symbol IDS G NF RLI RLO P1 dB PSAT JC Min. 15 Typ.3 275 19 10.5 -14 -16 Max. 350 Unit mA dB dB -10 -10 dB dB dBm dBm C/W 15 16 17 19 66 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 1/01A 1 31-35 GHz GaAs MMIC Driver Amplifier AA035P3-00 Typical Performance Data 30 20 10 S21 20 18 POUT (dBm) S11 S22 16 14 12 10 -10 (dB) 0 -10 -20 -30 30 31 32 33 34 35 36 -8 -6 -4 -2 0 2 4 Frequency (GHz) PIN (dBm) Typical Small Signal Performance S-Parameters (VDS = 5 V) Output Characteristic as a Function of Input Drive Level (F = 35 GHz, VDS = 5 V) Bias Arrangement 5V .01 F 50 pF Circuit Schematic RF IN RF OUT Detail A VDS For biasing on, adjust VDS from zero to the desired value (4 V-6 V recommended). For biasing off, reverse the biasing on procedure. RF IN SEE DETAIL A RF OUT 2 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 1/01A |
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